Samsung announced the world’s first GDDR7 chip with an impressive data I/O interface rate of 32Gbps. This innovative Samsung GDDR7 technology brings a 20% enhancement in energy efficiency compared to its predecessor, GDDR6, owing to the integration of several cutting-edge technologies.
The existing GDDR6 uses NRZ/PAM2 or GDDT6X PAM4 coding. GDDR7 uses PAM3 coding. The PAM3 signal coding enables 3-bit data transmission every two cycles, providing a substantial bandwidth boost. The initial 16Gb GDDR7 chip boasts an exceptional bandwidth of up to 1.536 TB/s with a bit width of 384 bits, vastly surpassing the current GeForce RTX 4090’s 1.008 TB/s.
Admittedly, the PAM3 signal encoding mechanism introduces complexity. While GDDR7’s consumption may not necessarily be lower than that of GDDR6, Samsung has countered this concern by introducing a high thermal conductivity epoxy molding compound (EMC). This innovation reduces the thermal resistance of the GDDR7 package by an impressive 70%.
Samsung refrained from disclosing the mass production timeline and process technology for GDDR7. However, speculation suggests that AMD’s upcoming Radeon RX 8000 series, based on the RDNA 4 architecture, will support GDDR7, potentially debuting next year at the earliest. Furthermore, Samsung anticipates GDDR7 to find its way into devices such as notebook computers, offering a low operating voltage option.
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In the coming year, GDDR7 will be first installed in the next-generation systems of Samsung’s clients for verification. Samsung GDDR7 is expected to be embraced in various domains. These include artificial intelligence, high-performance computing, and automotive applications. It will further revolutionize these industries.
