Samsung is set to unveil memory products at the 2024 IEEE International Solid-State Circuits Summit. One standout is the attention-grabbing ultra-high-speed Samsung 32Gb DDR5 memory chip.
It comes with a 12-nanometer (nm) process technology, and the Samsung 32Gb DDR5 has a doubled capacity while maintaining the same package size. It outperforms the 16Gb DDR5 DRAM, offering enhanced performance and increased storage space.
Executive Vice President Sang Joon Hwang of Samsung Electronics, the brain behind memory products and technology, highlights the 12nm-class 32Gb DRAM as an ideal solution in the era of artificial intelligence and big data. He underlines Samsung’s commitment to pushing memory technology limits through differentiated processes and design technologies.
The new Samsung 32Gb DDR5, unlike the previous DDR5 128GB DRAM module, eliminates the need for the through silicon via (TSV) process. This reduction in power consumption by approximately 10% is a significant stride for data centers grappling with the escalating energy demands of artificial intelligence.
Samsung’s latest DDR5 technology also supports the creation of Samsung 32Gb DDR5 and 48GB DIMMs at DDR5-8000 speeds in single-channel configurations and 64GB and 96GB DIMMs in dual-channel configurations. This further solidifies its competitive edge in the high-performance memory market.
This memory chip not only has storage capacity and performance but also achieves a crucial breakthrough in reducing power consumption. This underscores Samsung’s dedication to meeting the escalating demand for high-capacity DRAM in the era of artificial intelligence and big data while actively driving memory technology advancements.
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